Conventional n-Channel MOSFET Devices Using Single Layer HfO~ 2 and ZrO~ 2 as High-k Gate Dielectric
本文档由 145156456 分享于2014-03-04 15:58
Conventional n-Channel MOSFET Devices Using Single Layer HfO~ 2 and ZrO~ 2 as High-k Gate Dielectrica,using,layer,HfO2,and,ZrO,ZrO2,HfO
君,已阅读到文档的结尾了呢~~